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Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers

✍ Scribed by Tansu, N.; Ying-Lan Chang; Takeuchi, T.; Bour, D.P.; Corzine, S.W.; Tan, M.R.T.; Mawst, L.J.

No coin nor oath required. For personal study only.

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