MOCVD growth of highly strained InGaAs:Sb–GaAs–GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

✍ Scribed by H.C. Kuo; H.H. Yao; Y.H. Chang; Y.A. Chang; M.Y. Tsai; J. Hsieh; E.Y. Chang; S.C. Wang

• Book ID: 108165937
• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 330 KB
• Volume: 272
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2004.08.092