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Infrared tomography of the charge-carrier lifetime and diffusion length in semiconductor-grade silicon ingots

✍ Scribed by V. D. Akhmetov; N. V. Fateev

Book ID: 110125817
Publisher: Springer
Year: 2001
Tongue: English
Weight: 138 KB
Volume: 35
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1340287

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