𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Infrared absorption spectra of 4H silicon carbide

✍ Scribed by C.Q. Chen; R. Helbig; F. Engelbrecht; J. Zeman

Publisher
Springer
Year
2001
Tongue
English
Weight
188 KB
Volume
72
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Muonium in 4H silicon carbide
Muonium in 4H silicon carbide
✍ Y.G. Celebi; R.L. Lichti; B.R. Carroll; P.J.C. King; S.F.J. Cox πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 368 KB
Defect structure of 4H silicon carbide i
Defect structure of 4H silicon carbide ingots
✍ A.O. Lebedev; D.D. Avrov; A.V. Bulatov; S.I. Dorozhkin; Yu.M. Tairov; A.Yu. Fade πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 415 KB

Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been

Infrared analysis of porous silicon carb
Infrared analysis of porous silicon carbide
✍ Rossi, A. M. ;Giorgis, F. ;Ballarini, V. ;Borini, S. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 294 KB

## Abstract We report on the optical spectroscopies performed on porous SiC obtained by electrochemical etching of 6H–SiC wafers. Strong modifications of Raman and infrared spectra, characteristic of the porous material, have been detected. Various effective medium approximations have been employed