β Scribed by Rossi, A. M. ;Giorgis, F. ;Ballarini, V. ;Borini, S.
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We report on the optical spectroscopies performed on porous SiC obtained by electrochemical etching of 6HβSiC wafers. Strong modifications of Raman and infrared spectra, characteristic of the porous material, have been detected. Various effective medium approximations have been employed for the modeling of porous SiC dielectric function, in order to interpret the infrared reflectance features. Comparison between computational and experimental results indicates the MaxwellβGarnett model as the most appropriate approximation, and suggests that charge carriers within the porous matrix are likely to play a role in the interaction of the material with electromagnetic radiation. (Β© 2005 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
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