Infrared luminescence in silicon carbide
β Scribed by S.H. Hagen; A.W.C. van Kemenade
- Publisher
- Elsevier Science
- Year
- 1974
- Tongue
- English
- Weight
- 351 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0022-2313
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π SIMILAR VOLUMES
## Abstract We report on the optical spectroscopies performed on porous SiC obtained by electrochemical etching of 6HβSiC wafers. Strong modifications of Raman and infrared spectra, characteristic of the porous material, have been detected. Various effective medium approximations have been employed
Porous silicon has been studied using in situ infrared spectroscopy combined with photoluminescence, electroluminescence, photomodulated and electromodulated infrared absorption, when the porous layer is either chemically etched in HF or anodically oxidized. Infrared vibrational spectra indicate tha