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Low-temperature luminescence of silicon carbide crystals

โœ Scribed by I. S. Gorban; G. N. Mishinova; Yu. M. Suleimanov


Publisher
Springer US
Year
1966
Tongue
English
Weight
323 KB
Volume
5
Category
Article
ISSN
0021-9037

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๐Ÿ“œ SIMILAR VOLUMES


Silicon carbide film deposition at low t
โœ Hitoshi Habuka; Hiroshi Ohmori; Yusuke Ando ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 725 KB

A silicon carbide film is formed at low temperatures on a silicon surface by chemical vapor deposition using monomethylsilane gas along with hydrogen chloride gas in ambient hydrogen at atmospheric pressure. A 0.2-ฮผm thick film, obtained at 1073 K and at a hydrogen chloride gas concentration greater