A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 Β΅m with a peak-wavelength of Ξ» p = 5 Β΅m u
Infrared absorption in p-type SiGeSi quantum wells: Intersubband transition and free carrier contributions
β Scribed by S. Zanier; Y. Guldner; J.M. Berroir; J.P. Vieren; I. Sagnes; Y. Campidelli; P.A. Badoz
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 450 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
We present a detailed study of the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of p :2.8;10 cm\, both p-and s-polarized absorptions have been observed and transitions to several excited states are clearly identif
A study of intersubband infrared absorption in modulation doped p-type \(\mathrm{Si} / \mathrm{SiGe}\) quantum wells is presented for SiGe wells with thicknesses between \(22 \AA\) and \(64 \AA\) and \(\mathrm{Ge}\) contents in the range from \(23 \%\) to \(58 \%\). The peak positions of the absorpt