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Influence of the reactive N2 gas flow on the properties of rf-sputtered ZnO thin films

✍ Scribed by Jinzhong Wang; Vincent Sallet; François Jomard; Ana M. Botelho do Rego; Elangovan Elamurugu; Rodrigo Martins; Elvira Fortunato

Book ID
108289670
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
544 KB
Volume
515
Category
Article
ISSN
0040-6090

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## Abstract Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as‐