๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures

โœ Scribed by Bai, J.; Wang, T.; Sakai, S.

Book ID
120461423
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
330 KB
Volume
88
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Structural properties of ultrathin InGaN
Structural properties of ultrathin InGaN/GaN quantum wells
โœ Sahonta, S.-L. ;Komninou, Ph. ;Dimitrakopulos, G. P. ;Salcianu, C. ;Thrush, E. J ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 682 KB

## Abstract A high indiumโ€content blue lightโ€emitting diode (LED) structure grown on silicon (111), consisting of five very thin MOCVDโ€grown In~0.2~Ga~0.8~N quantum wells (QWs), is shown by high resolution transmission electron microscopy (HRTEM) to contain structural defects in the active region.