✦ LIBER ✦

Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

✍ Scribed by Feng, Shih-Wei; Cheng, Yung-Chen; Chung, Yi-Yin; Yang, C. C.; Lin, Yen-Sheng; Hsu, Chen; Ma, Kung-Jeng; Chyi, Jen-Inn

Book ID: 121759328
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 340 KB
Volume: 92
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1506393

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of the quantum-well thickness

Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures

✍ Bai, J.; Wang, T.; Sakai, S. 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 330 KB

Recombination dynamics in InGaN/GaN quan

Recombination dynamics in InGaN/GaN quantum wells: role of the piezoelectric field versus carrier localization

✍ A. Vinattieri; M. Colocci; F. Rossi; C. Ferrari; N. Armani; G. Salviati; A. Real 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 139 KB

Two-dimensional “pseudo-donor–acceptor-p

Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells

✍ A Morel; P Lefebvre; T Taliercio; T Bretagnon; B Gil; N Grandjean; B Damilano; J 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 203 KB

Effect of GaN cap thickness on carrier d

Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells

✍ O. Kopylov; R. Shirazi; O. Svensk; S. Suihkonen; S. Sintonen; M. Sopanen; B. E. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 242 KB

Investigation of the Optical Properties

Investigation of the Optical Properties in InGaN/GaN Quantum Well Structure

✍ T. Wang; D. Nakagawa; M. Lachab; T. Sugahara; S. Saki 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 223 KB 👁 3 views

The paper investigates the optical properties of InGaN/GaN single quantum well and multiple quantum well structures. For the multiple quantum well structure, we investigated the thickness dependence of the optical properties. Based on these studies, this paper presents 1. for the single quantum well

Study of the strain relaxation in InGaN/

Study of the strain relaxation in InGaN/GaN multiple quantum well structures

✍ Bai, J.; Wang, T.; Sakai, S. 📂 Article 📅 2001 🏛 American Institute of Physics 🌐 English ⚖ 289 KB