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Influence of the preparation conditions on the formation of WNx/WSi2/Si by thermal annealing under NH3 of W on Si

✍ Scribed by A. Deneuville; M. Benyahya; M. Brunel; J.C. Oberlin; J. Torres; N. Bourhila; J. Paleau; B. Canut


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
442 KB
Volume
38
Category
Article
ISSN
0169-4332

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## Abstract The influence of thermal annealing on the image contrast of the boundaries of ^49^BF~2~^+^‐implanted regions in Si is investigated by means of X‐ray topography. The contrast is used for studying the wafer bending and the stress types. It is shown that the final state of deformation is d