In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.% W-Ti target, using Ar ions, to a thickness of ~170 nm. After deposit
✦ LIBER ✦
Effects of thermal annealing on the structural properties of sputtered W–Si–N diffusion barriers
✍ Scribed by Alberto Vomiero; Enrico Boscolo Marchi; Stefano Frabboni; Alberto Quaranta; Gianantonio Della Mea; Gino Mariotto; Laura Felisari; Mariangela Butturi
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 411 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1369-8001
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