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Influence of the dynamic access resistance in the gm and fT linearity of AlGaN/GaN HEMTs

✍ Scribed by Palacios, T.; Rajan, S.; Chakraborty, A.; Heikman, S.; Keller, S.; DenBaars, S.P.; Mishra, U.K.

Book ID: 114617963
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 653 KB
Volume: 52
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2005.856180

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