Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN

✍ Scribed by Rozhavskaya, M. M.; Lundin, V. V.; Zavarin, E. E.; Troshkov, S. I.; Brunkov, P. N.; Tsatsulnikov, A. F.

• Book ID: 120344540
• Publisher: Springer
• Year: 2013
• Tongue: English
• Weight: 927 KB
• Volume: 47
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/S1063782613030226