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Influence of source/drain contacts on sub-micrometer organic field-effect transistors

✍ Scribed by Scheinert, S. ;Paasch, G. ;Hörselmann, I. ;Herasimovich, A.

Book ID: 105363261
Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 217 KB
Volume: 202
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200510027

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✦ Synopsis

Abstract

Measured output characteristics of our prepared short‐channel organic transistor show the well known effect of a nonlinear increase of the drain current with positive curvature at low drain voltages. We investigated this peculiarity by means of 2D simulations considering the bilayer contact for source or drain, respectively. The simulations show that the low work function of the chromium adhesion layer causes the nonlinearity. Another important aspect demonstrated by the simulations is the estimation of the mobility applying the simple Shockley equation. The influence of the contact properties on the rise of the drain current results in erroneous values for the mobility as estimated directly from the current–voltage characteristics.

Output characteristics of a 1 µm channel length transistor.

magnified imageOutput characteristics of a 1 µm channel length transistor.

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