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Experimental demonstration of In[sub 0.53]Ga[sub 0.47]As field effect transistors with scalable nonalloyed source/drain contacts

✍ Scribed by Hu, Jenny; Saraswat, Krishna C.; Wong, H.-S. Philip

Book ID: 125454926
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 548 KB
Volume: 98
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3553192

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