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Influence of Source/Drain Residual Implant Lattice Damage Traps on Silicon Carbide Metal Semiconductor Field-Effect Transistor Drain I-V Characteristics

✍ Scribed by J. Adjaye; M.S. Mazzola


Book ID
113847223
Publisher
Elsevier
Year
2012
Tongue
English
Weight
445 KB
Volume
25
Category
Article
ISSN
1875-3892

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