Influence of sample inclination and rotation during ion-beam etching on ion-etched structures
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 158 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0042-207X
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β¦ Synopsis
A low-energy electron spectrometer using concentric hemispheres and a grid retarding field. (GB) An improved low-energy electron spectrometer using concentric hemispheres with a grid retarding field is presented. Emphasis is given to the means by which a triple-cylinder electrostatic lens, with the middle potential higher than the outer potentials, can perform a preselection. This improves simultaneously the collection efficiency and the intrinsic signal-to-noise ratio of the spectrometer. The operating mode of both the input lens and hemispheres is invariable over the energy range O-l 500 eV. The comparison of Auger transition probabilities is therefore possible. The variatfons of the relative collection efficiency and instrumental broadening as functions of the detection energy inside the deflectors are shown on characteristic curves. Good quality Auger spectra of molybdenum and silicon carbide are given as examples on the electron distribution curves N(E) = r(E),obtainedwithaverysmallcurrentdensity(lO-'
A cmm2) at relatively low primary energy (I 500 eV). (France)
π SIMILAR VOLUMES
TEM sample preparation, VLSI, semiconductor processing, Defect analysis A cross-sectional sample preparation technique is described that relies on lithographic and dry-etching processing, thus avoiding metallographic polishing and ion milling. The method is capable of producing cross-sectional trans
Polystyrene films of 100 nm thickness were modified using plasma immersion ion implantation (PIII) with argon ions of energy 20 keV and fluences in the range 2 β’ 10 14 -2 β’ 10 16 ions cm Γ2 . The structure and properties of the films were determined by ellipsometry and FTIR spectroscopy, as well as