Etching and structural changes of polystyrene films during plasma immersion ion implantation from argon plasma

✍ Scribed by A. Kondyurin; B.K. Gan; M.M.M. Bilek; K. Mizuno; D.R. McKenzie

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 431 KB
• Volume: 251
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.06.027

✦ Synopsis

Polystyrene films of 100 nm thickness were modified using plasma immersion ion implantation (PIII) with argon ions of energy 20 keV and fluences in the range 2 • 10 14 -2 • 10 16 ions cm À2 . The structure and properties of the films were determined by ellipsometry and FTIR spectroscopy, as well as AFM, wetting angle measurements, profilometry and optical microscopy. The effects of oxidation, carbonization, etching and gel-formation were observed. The etching rate was found to decrease with PIII fluence. The rates of degradation with increasing fluence of the aromatic and aliphatic parts of the polystyrene macromolecule were found to be similar. Oxidation of the polystyrene film ceases at fluences greater than 10 15 ions cm À2 . The surface morphology of the film did not change with PIII fluence. Washing with toluene produced surface wrinkling for low fluences up to 10 15 ions cm À2 while at high fluences the modified films were stable.