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On the preparation of cross-sectional TEM samples using lithographic processing and reactive ion-etching

โœ Scribed by J.T. Wetzel; M. Jost; S.A. Rishton; P.M. Fryer; K.T. Kwietniak; D. Klaus; J.J. Bucchignano; C.-K. Hu; T.J. Brown Jr.

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
442 KB
Volume
29
Category
Article
ISSN
0304-3991

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Preparation of cross-sectional transmission electron microscopy samples by electron beam lithography and reactive ion etching
โœ Wetzel, J. T. ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Wiley (John Wiley & Sons) ๐ŸŒ English โš– 764 KB

TEM sample preparation, VLSI, semiconductor processing, Defect analysis A cross-sectional sample preparation technique is described that relies on lithographic and dry-etching processing, thus avoiding metallographic polishing and ion milling. The method is capable of producing cross-sectional trans