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Influence of mobility model on extraction of stress dependent source–drain series resistance

✍ Scribed by M.M. De Souza; S.K. Manhas; D. Chandra Sekhar; A.S. Oates; P. Chaparala


Book ID
104057734
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
427 KB
Volume
44
Category
Article
ISSN
0026-2714

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Two critical aspects of the MOS scaling towards sub-100 nm gate length are addressed: the gate tunneling and capacitance modeling, and optimization of shallow source/drain (S/D) extension junction to minimize the series resistance. Both advanced physics (quantum mechanics or QM) and practical soluti