Influence of Mg Doping on GaN Nanowires
β Scribed by Dongdong Zhang; Chengshan Xue; Huizhao Zhuang; Haibo Sun; Yuping Cao; Yinglong Huang; Zouping Wang; Ying Wang
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 386 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1439-4235
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This work presents a detailed study of the subgrain structure of Si doped GaN grown on AlN buffered (111)Si substrates by plasma-assisted Molecular Beam Epitaxy. Si doping increases from an unintentionally undoped sample up to 1.7 Γ 10 19 cm -3 . The subgrain size distribution fits quite precisely a
GaN:Mg/AlGaN single heterostructures were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE) leading to the fabrication of light emitting diodes (LEDs). p-type is successfully achieved using Mg, obtaining hole concentrations in the range of 1 Γ 10 17 cm Γ3 . Although an in