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Influence of MBE growth temperature on GaAs/AlAs resonant tunneling structures

โœ Scribed by A. C. Campbell; V. P. Kesan; T. R. Block; G. E. Crook; D. P. Neikirk; B. G. Streetman

Book ID
112815997
Publisher
Springer US
Year
1989
Tongue
English
Weight
453 KB
Volume
18
Category
Article
ISSN
0361-5235

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โœ Hyunsik Im; P. C. Klipstein; J. M. Smith; R. Grey; G. Hill ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 190 KB

We have investigated the 2D 3 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D 3 2D resonant tunneling between confined transverse X X