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Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structures

โœ Scribed by Tsuchiya, Masahiro; Sakaki, Hiroyuki

Book ID
118147789
Publisher
American Institute of Physics
Year
1986
Tongue
English
Weight
585 KB
Volume
49
Category
Article
ISSN
0003-6951

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๐Ÿ“œ SIMILAR VOLUMES

Effective mass in the barriers of GaAs/A
Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodes
โœ D. Landheer; G.C. Aers; Z.R. Wasilewski ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 496 KB

We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu