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Influence of MBE growth and rapid thermal annealing conditions on the electrical properties of normal and inverted AlGaAs/InGaAs pseudomorphic HEMT structures

✍ Scribed by Kesan, V.P.; Dodabalapur, A.; Neikirk, D.P.; Streetman, B.G.

Book ID: 114538443
Publisher: IEEE
Year: 1988
Tongue: English
Weight: 148 KB
Volume: 35
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.8857

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