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[IEEE 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. - Kagoshima, Japan (May 31 - June 4, 2004)] 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. - Photoluminescence and electrical properties of InGaAs/InP composite channel metamorphic HEMT structures subjected to rapid thermal annealing

✍ Scribed by Yuwei Liu, ; Hong Wang, ; Yongzhong Xiong,

No coin nor oath required. For personal study only.

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