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Influence of low-temperature annealing on the dielectric characteristics and final parameters of SiO2 MIS thin film transistors

✍ Scribed by M Estrada; A Cerdeira; Y Matsumoto; F Meléndez

Book ID
108388966
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
197 KB
Volume
298
Category
Article
ISSN
0040-6090

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## Abstract We report the roles of post‐deposition annealing of PVP/pentacene double‐layered films on the electrical properties of organic thin film transistors (OTFTs). Data obtained by atomic force microscopy (AFM) and X‐ray diffraction (XRD) techniques demonstrate that both the grain size and th