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Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon

โœ Scribed by Moutanabbir, O.; Terreault, B.; Chicoine, M.; Schiettekatte, F.; Simpson, P. J.

Book ID
121413655
Publisher
The American Physical Society
Year
2007
Tongue
English
Weight
895 KB
Volume
75
Category
Article
ISSN
1098-0121

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