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Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

✍ Scribed by A. E. Kunitsyn; V. V. Chaldyshev; S. P. Vul’; V. V. Preobrazhenskii; M. A. Putyato; B. R. Semyagin

No coin nor oath required. For personal study only.

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