✦ LIBER ✦
Effect of growth temperature on the optical, electrical and crystallographic properties of epitaxial indium gallium arsenide grown by MOCVD in an atmospheric pressure reactor
✍ Scribed by Bass, S.J.; Barnett, S.J.; Brown, G.T.; Chew, N.G.; Cullis, A.G.; Pitt, A.D.; Skolnick, M.S.
- Book ID
- 107789883
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 863 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0022-0248
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