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Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature

✍ Scribed by A. V. Boĭtsov; N. A. Bert; Yu. G. Musikhin; V. V. Chaldyshev; M. A. Yagovkina; V. V. Preobrazhenskiĭ; M. A. Putyato; B. R. Semyagin

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