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Influence of HfAlO composition on memory effects of metal-oxide-semiconductor capacitors with Al2O3/HfAlO/Al2O3 layers and Pd electrode

โœ Scribed by Gou, Hong-Yan; Chen, Sun; Ding, Shi-Jin; Sun, Qing-Qing; Lu, Hong-Liang; Zhang, David Wei; Wang, Peng-Fei


Book ID
121657677
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
871 KB
Volume
529
Category
Article
ISSN
0040-6090

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Memory characteristics of Al2O3/La2O3/Al
โœ Hyo June Kim; Seung Yong Cha; Doo Jin Choi ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 388 KB

In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al 2 O 3 /5 nm La 2 O 3 /5 nm Al 2 O 3 and 15 nm Al 2 O 3 /5 nm La 2 O 3 /5, 7.5, and 10 nm Al 2 O 3 multi-stack films,