Influence of germanium content on the degradation of strained Si1−xGex epitaxial diodes by electron irradiation

✍ Scribed by Ohyama, H. ;Vanhellemont, J. ;Sunaga, H. ;Poortmans, J. ;Caymax, M. ;Clauws, P.

• Publisher: John Wiley and Sons
• Year: 1994
• Tongue: English
• Weight: 558 KB
• Volume: 143
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2211430123