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Influence of gate thermal oxide layer on InGaP/InGaAs doping-channel field-effect transistors

✍ Scribed by Jung-Hui Tsai

Book ID: 113784579
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 513 KB
Volume: 133
Category: Article
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2012.01.033

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