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Influence of experimental parameters on physical properties of porous silicon and oxidized porous silicon layers

✍ Scribed by J. Charrier; V. Alaiwan; P. Pirasteh; A. Najar; M. Gadonna


Book ID
108060271
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
583 KB
Volume
253
Category
Article
ISSN
0169-4332

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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi