Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi
Optical properties of porous silicon on an insulator layer
✍ Scribed by M. Balarin; O. Gamulin; M. Ivanda; M. Kosović; D. Ristić; M. Ristić; S. Musić; K. Furić; D. Krilov
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 955 KB
- Volume
- 993
- Category
- Article
- ISSN
- 0022-2860
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