Nanostructured cobalt on porous silicon
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Belkacem, W. ;Mliki, N. ;Belhi, R. ;Saikaly, W. ;Yangui, B.
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Article
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2007
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John Wiley and Sons
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English
β 954 KB
## Abstract During an anodization process, porous silicon (PS) consisting of pores with a diameter of about 40 nm and a depth from 5 Β΅m to 40 Β΅m has been produced. To achieve oriented channels in this mesoporous range, a p^+^βtype Si wafer was electrochemically etched in an aqueous electrolyte of H