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Influence of deposition temperature and bias voltage on the crystalline phase of Er2O3 thin films deposited by filtered cathodic arc

✍ Scribed by Christoph Adelhelm; Thomas Pickert; Freimut Koch; Martin Balden; Stephan Jahn; Monika Rinke; Hans Maier

Book ID
113731472
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
996 KB
Volume
417
Category
Article
ISSN
0022-3115

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## Abstract High‐quality titanium nitride (TiN) films with nano‐structure were prepared at ambient temperature on (111) silicon substrates by filtered cathodic arc plasma (FCAP) technology with an in‐plane β€œS” filter. The effects of substrate bias and argon flux on the crystal grain size, roughness