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Influence of crystalline defects on transport properties of GaN grown by ammonia-molecular beam epitaxy and magnetron sputter epitaxy

✍ Scribed by H. Tang; J. Webb; J. Bardwell; B. Leathem; S. Charbonneau; S. Raymond

Book ID: 107452415
Publisher: Springer US
Year: 2000
Tongue: English
Weight: 146 KB
Volume: 29
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-000-0061-0

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