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Influence of contact shape on AlGaN/GaN Schottky diode prepared on Si with thick buffer layer

✍ Scribed by Manoj Kumar, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara

Book ID: 120782787
Publisher: Springer
Year: 2013
Tongue: English
Weight: 612 KB
Volume: 112
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s00339-013-7769-1

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