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Influence of annealing effects on the electrical and microstructural properties of Se Schottky contacts on n-type GaN

✍ Scribed by Rajagopal Reddy, V.; Janardhanam, V.; Kang, Min-Sung; Choi, Chel-Jong

Book ID: 125362747
Publisher: Springer US
Year: 2014
Tongue: English
Weight: 980 KB
Volume: 25
Category: Article
ISSN: 0957-4522
DOI: 10.1007/s10854-014-1891-5

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## Abstract The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on n‐type gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the as‐deposited Pt/Ru Schottky contact is found to be 0.69 eV cu