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Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN

✍ Scribed by C. K. Ramesh; V. Rajagopal Reddy; K. S. R. Koteswara Rao

Publisher
Springer US
Year
2006
Tongue
English
Weight
239 KB
Volume
17
Category
Article
ISSN
0957-4522

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πŸ“œ SIMILAR VOLUMES

Electrical characteristics and interfaci
Electrical characteristics and interfacial reactions of rapidly annealed Pt/Ru Schottky contacts on n-type GaN
✍ Reddy, N. Nanda Kumar ;Reddy, V. Rajagopal ;Choi, C.-J. πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 687 KB

## Abstract The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on n‐type gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the as‐deposited Pt/Ru Schottky contact is found to be 0.69 eV cu