## Abstract Thermal annealing effects on the electrical and structural properties of Ni/Mo Schottky contacts on n‐type GaN have been investigated by current–voltage (__I–V__), capacitance–voltage (__C–V__), Secondary ion mass spectrometer (SIMS), and X‐ray diffraction (XRD) techniques. The extracte
Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface
✍ Scribed by I. Jyothi; V. Rajagopal Reddy; Chel-Jong Choi
- Publisher
- Springer US
- Year
- 2010
- Tongue
- English
- Weight
- 575 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0957-4522
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