Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts
β Scribed by V. Rajagopal Reddy; P. Koteswara Rao; C.K. Ramesh
- Book ID
- 108215431
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 706 KB
- Volume
- 137
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The effects of rapid thermal annealing on the electrical and structural properties of Pd/Au Schottky contacts to nβtype InP(111) have been investigated by currentβvoltage (__I__ β__V__), capacitanceβvoltage (__C__ β__V__) and Xβray diffraction (XRD) measurements. The barrier height of t
## Abstract The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on nβtype gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the asβdeposited Pt/Ru Schottky contact is found to be 0.69βeV cu