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Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-AlxGa1−xAs grown by molecular beam epitaxy

✍ Scribed by H. Künzel; K. Ploog; K. Wünstel; B. L. Zhou

Book ID: 112815580
Publisher: Springer US
Year: 1984
Tongue: English
Weight: 998 KB
Volume: 13
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02656681

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