The dependence of room-temperature photoluminescence efficiency of Si-doped AlxGa1−xAs on the flux ratio used during growth by molecular-beam epitaxy

✍ Scribed by Tsui, R.K.; Curless, J.A.; Kramer, G.D.; Peffley, M.S.

• Book ID: 122811232
• Publisher: Elsevier Science
• Year: 1984
• Tongue: English
• Weight: 324 KB
• Volume: 3
• Category: Article
• ISSN: 0167-577X
• DOI: 10.1016/0167-577X(84)90017-X