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Influence of activation of Si 29+ ion-implantation in GaAs on ohmic contact resistance and electrical performances of MESFETs

✍ Scribed by Saravanan, G. Sai; Bhat, K. Mahadeva; Vyas, H. P.; Muraleedharan, K.; Pathak, A. P.

Book ID: 120160894
Publisher: Taylor and Francis Group
Year: 2008
Tongue: English
Weight: 632 KB
Volume: 163
Category: Article
ISSN: 1042-0150
DOI: 10.1080/03067310701643014

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