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As2-ambient activation and alloyed-ohmic-contact studies of Si+-ion-implanted Al0.3Ga0.7 As/GaAs modulation-doped structures : S. D. Mukherjee, P. Zwicknagl, H. Lee, L. Rathbun and L. F. Eastman. Solid-St. Electron.29 (2), 181 (1986)


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
120 KB
Volume
27
Category
Article
ISSN
0026-2714

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