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Influence of a predeposited Si1−xGexlayer on the growth of self-assembled SiGe/Si(001) islands

✍ Scribed by N. V. Vostokov; Yu. N. Drozdov; Z. F. Krasil’nik; D. N. Lobanov; A. V. Novikov; A. N. Yablonskii; M. Stoffel; U. Denker; O. G. Schmidt; O. M. Gorbenko; I. P. Soshnikov

Book ID
110140941
Publisher
SP MAIK Nauka/Interperiodica
Year
2005
Tongue
English
Weight
181 KB
Volume
47
Category
Article
ISSN
1063-7834

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Growth and photoluminescence of self-ass
Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer
✍ D.N. Lobanov; A.V. Novikov; N.V. Vostokov; Y.N. Drozdov; A.N. Yablonskiy; Z.F. K 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 367 KB

The growth and photoluminescence of Ge(Si) self-assembled islands on strained Si 1Àx Ge x layers (0 < x < 20%) has been investigated. Both island size and density increase when the Ge content in the predeposited Si 1Àx Ge x alloy increases. The increased island density is associated with an enhanced